Fermi-level pinning and growth characteristics of Au on InP()
- 1 October 1986
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 26 (4) , 381-391
- https://doi.org/10.1016/0169-4332(86)90112-1
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Interdiffusion and chemical trapping at InP(110) interfaces with Au, Al, Ni, Cu, and TiPhysical Review B, 1984
- Construction of a low-noise, 16-bit, digital-to-analog converter interface for Apple computersReview of Scientific Instruments, 1984
- Noble metal interactions with the InP(110) surfaceJournal of Vacuum Science & Technology A, 1984
- Chemisorption-induced defects at interfaces on compound semiconductorsSurface Science, 1983
- Photoemission studies of the Au–InP(110) interfaceJournal of Vacuum Science & Technology A, 1983
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Surface vacancies in InP and GaAlAsApplied Physics Letters, 1980
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Electronic Structure of a Neutral Phosphorus Vacancy in GaP and InPPhysica Status Solidi (b), 1979
- Chemical reaction and charge redistribution at metal–semiconductor interfacesJournal of Vacuum Science and Technology, 1978