Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solution
- 31 January 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (3) , 115-116
- https://doi.org/10.1049/el:19850080
Abstract
A gradual degradation has been observed in the RF performance of GaAs power FETs. Electrical and physical analyses have been carried out, indicating the role played by the surface. A plasma enhanced chemical vapour deposited silicon nitride film is established as a suitable surface passivation.Keywords
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