Proton-irradiated silicon: Complete electrical characterization of the induced dominant deep defects after long-term annealing
- 28 February 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 2 (1-3) , 87-90
- https://doi.org/10.1016/0921-5107(89)90081-0
Abstract
No abstract availableKeywords
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