Grid depth dependence of the characteristics of vertical channel field controlled thyristors
- 31 March 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (3) , 237-239
- https://doi.org/10.1016/0038-1101(79)90027-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Factors determining forward voltage drop in the field-terminated diode (FTD)IEEE Transactions on Electron Devices, 1978
- Optimum design of triode-like JFET's by two-dimensional computer simulationIEEE Transactions on Electron Devices, 1977
- Power bipolar gridistorElectronics Letters, 1976
- A field terminated diodeIEEE Transactions on Electron Devices, 1976
- Field-effect transistor versus analog transistor (static induction transistor)IEEE Transactions on Electron Devices, 1975