Abstract
We present a model that explains two phenomena, recently observed in high-mobility Si-MOS structures: (i) the strong enhancement of metallic conduction at low temperatures, T<2 K, and (ii) the occurrence of the metal-insulator transition in 2D electron system. Both effects are prescribed to the Coulomb and spin-orbit interaction; the latter is anomalously enhanced by the broken inversion symmetry of the confining potential well.
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