High deposition rate amorphous silicon-based multijunction solar cell
- 30 January 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (5) , 595-597
- https://doi.org/10.1063/1.114024
Abstract
We have investigated and optimized the deposition conditions for growth of amorphous silicon (a‐Si:H) and silicon‐germanium (a‐SiGe:H) alloys at high rates using microwaveglow discharge. The optimum substrate temperature is found to be higher and deposition pressure lower than the case for materials deposited at low rates using radio‐frequency glow discharge. Using the optimized conditions, we report an active‐area efficiency of 11.44% for a double‐junction, dual‐gap a‐Si:H alloy solar cell in which the bottom cell incorporates a‐SiGe:H alloy deposited at 100 Å/s.Keywords
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