Li doped ZnSe and problems of p-type conduction
- 1 September 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 59 (1-2) , 189-195
- https://doi.org/10.1016/0022-0248(82)90323-2
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- High-purity ZnSe grown by liquid phase epitaxyApplied Physics Letters, 1981
- Spectroscopic studies of ZnSe grown by liquid phase epitaxyIEEE Transactions on Electron Devices, 1981
- Are impurities the cause of ’’self’’-compensation in large-band-gap semiconductors?Journal of Applied Physics, 1980
- Potential Profiling as a Means to Determine Conductivity Type: Application to ZnSeJournal of the Electrochemical Society, 1980
- Donor-acceptor pair bands in ZnSePhysical Review B, 1979
- Advances in injection luminescence of II–VI compoundsJournal of Luminescence, 1973
- Pair Spectra and the Shallow Acceptors in ZnSePhysical Review B, 1973
- Optical Studies of Shallow Acceptors in CdS and CdSePhysical Review B, 1971
- p-TYPE CONDUCTION IN Li-DOPED ZnSeApplied Physics Letters, 1971
- Self-Compensation Limited Conductivity in Binary Semiconductors. I. TheoryPhysical Review B, 1964