High-resolution electron energy-loss studies of space-charge layers on doped GaAs(110) surfaces

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Abstract
High-resolution electron energy-loss spectroscopy is used to study heavily doped n-GaAs(110) (4×1018 cm−3). The surface optical phonons and plasmons due to conduction band free carriers are measured. Surface Fermi level pinning is induced with atomic hydrogen adsorption which forms a depletion layer and shifts the plasmon loss. The shifts are calculated in the framework of a two-layer model.

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