Preparation Method and Optoelectrical Properties of a-Se/CdxSe1-x Multilayer Films
- 1 July 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (7R) , 991-995
- https://doi.org/10.1143/jjap.26.991
Abstract
The preparation of multilayer films consisting of alternate a-Se and Cd x Se1-x structures with a periodic distances ranging from 40 to 400 A is discussed. An investigation of the chemical structure of the resulting films and their optoelectrical properties revealed a strong dependence on the preparation parameters and on the composition and the design of the films. These evaluations also indicated that the multilayered structure did not give rise to additional deep trapping states, in spite of the high number of layer interfaces.Keywords
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