Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide
- 15 September 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 23 (11) , 581-585
- https://doi.org/10.1103/physrevlett.23.581
Abstract
The values, line shapes, and linewidths of the ESR signals from within the bulk of amorphous silicon, germanium, and silicon carbide are found to be similar to those of the electron states observed in the surface regions of the corresponding crystalline forms. Discussion is given in terms of a microcrystalline model.
Keywords
This publication has 20 references indexed in Scilit:
- Preparation and Properties of Noncrystalline Silicon Carbide FilmsJournal of Applied Physics, 1968
- Amorphous germanium and silicon: Structure and transport phenomenaMaterials Research Bulletin, 1968
- Optical properties and electronic structure of amorphous Ge and SiMaterials Research Bulletin, 1968
- Electrical and Optical Properties of Amorphous GermaniumPhysical Review B, 1967
- Calculation of Upper Bounds to the Small-Angle Scattering from Crystallite Models of Amorphous MaterialsJournal of Applied Physics, 1966
- Paramagnetic Resonance of Defects Introduced Near the Surface of Solids by Mechanical DamageJournal of Applied Physics, 1961
- Struktur des amorphen Germaniums und SiliciumsZeitschrift für Naturforschung A, 1958
- Exchange Narrowing in Paramagnetic ResonanceReviews of Modern Physics, 1953
- Das amorphe GermaniumZeitschrift für Naturforschung A, 1951
- The Dipolar Broadening of Magnetic Resonance Lines in CrystalsPhysical Review B, 1948