Continuous wave lasing in GaInAsP microdisk injectionlaser with threshold current of 40 µA
- 27 April 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (9) , 790-791
- https://doi.org/10.1049/el:20000609
Abstract
A threshold current of 40 µA, nearly 1/4 of the previous lowest record, has been obtained in a GaInAsP-InP microdisk injection laser. This decrease was thought to be mainly due to the reduction of disk diameter and symmetric post-claddings by Cl2/Xe inductively coupled plasma etching.Keywords
This publication has 4 references indexed in Scilit:
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