42 GHz static frequency divider in a Si/SiGe bipolar technology

Publisher Website

22 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/isscc.1997.585293

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
IEEE Electron Device Letters, 1992