Application of Rapid Isothermal Annealing to Shallow p‐n Junctions via BF 2 Implants
- 1 April 1985
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 132 (4) , 914-917
- https://doi.org/10.1149/1.2113984
Abstract
A few seconds halogen lamp annealing (HLA) technology is evaluated from the viewpoint of practical application to complementary metal oxide semiconductor (CMOS) very large scale integration (VLSI) processing. , 11B, and 31P ion‐implanted silicon layers have been investigated on their isothermal short‐time annealing behavior of junction leakage current, recrystallization, activation, and junction depth. We have found that a few seconds annealing of 800°C is enough to crystalline regrow the or 31P ion‐implanted amorphous layer, to activate or 31P ion‐implanted dopants, to form titanium silicide, and to reduce the area leakage current of both n+‐p− and p+‐n− junctions without dopant diffusion. But activation of 11B+ ion‐implanted dopants, reduction of perimeter leakage current, molybdenum silicide formation, and phosphosilicate glass (PSG) reflow require a little higher temperature heat‐treatment.Keywords
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