Behavior and characteristics of radiationally heated GaAs substrates

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Abstract
Molybdenum substrate holders, which secure GaAs substrates without indium bonding, have been fabricated and tested. The holder design permits quick substrate loading and is compatible for reflection high-energy electron diffraction measurements. The substrate surface temperature is determined pyrometrically and the methodology is discussed in detail. The substrate temperature is stably controlled by regulating the substrate heater voltage as opposed to conventional thermocouple control. Using voltage regulation the temperature of the radiationally heated substrates can be rapidly changed with excellent control. The temperature uniformity for 2 in. diam substrates is ±5 °C at typical molecular-beam epitaxial growth temperatures. Quantitative differences caused by free-carrier absorption are observed in the heating behavior of undoped and N-type substrates. After epitaxial growth has been initiated, negligible substrate temperature droop is observed. The substrates exhibit insignificant backside erosion and wafer flatness is excellent for high resolution lithography.

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