Submilliampere lasing of Zn-diffused mesa buried-hetero Al x Ga 1- x As/GaAs multi-quantum-well lasers at 77 K

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Abstract
Extremely low-threshold semiconductor lasers were fabricated by forming Zn-diffused mesa buried-hetero (DMB) structures from low-pressure MOCVD-grown AlxGa1-xAs/GaAs multi-quantum-well, separate-confinement heterostructure wafers. CW threshold currents as low as 880 μA at 77 K and 2.4 mA at room temperature were obtained for a 100 μm-long device.