Ion-assisted sputter deposition of CdTe layers

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Abstract
Epitaxial, single-phase CdTe layers have been deposited on a variety of single-crystal substrates, including freshly cleaved KBr and NaCl and polished BaF2, by ion-assisted, planar, rf magnetron sputtering. The substrate temperature and bias were used as independent, operator-controlled process parameters to greatly enhance the degree of orientation in the films and (or) modify the crystallographic form of the deposited layer. Thus, depending primarily on the substrate temperature and bias, the deposited CdTe films exhibited one of several forms: (i) single-phase, highly oriented cubic, (ii) single-phase, highly oriented hexagonal, (iii) two-phase, highly oriented, hexagonal plus cubic or hexagonal plus tetragonal, and (iv) single-phase, epitaxial tetragonal. Compositional analysis revealed no impurities. However, films of all crystallographic phases contained a large density of planar defects such as twins, stacking faults, and low-angle grain boundaries.

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