Distribution of radiation defects in silicon irradiated with fast charged particles
- 16 June 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 5 (3) , 591-596
- https://doi.org/10.1002/pssa.2210050307
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Anisotropic effects in radiation damage of crystalsPhysics Letters A, 1969
- Measurements of the Distribution of Defect Introduction Rate with Depth in Silicon Irradiated with 300-keV ElectronsJournal of Applied Physics, 1966
- Distribution of Electron-Bombardment-Induced Radiation Defects with Depth in SiliconJournal of Applied Physics, 1963
- Radiation Damage by Charged Particles in Silicon Junction DetectorsIEEE Transactions on Nuclear Science, 1963
- Energy Dissipation by Ions in the kev RegionPhysical Review B, 1961
- Multiple Scattering Correction for Proton Ranges and the Evaluation of theL-Shell Correction andIValue for AluminumPhysical Review B, 1960