Growth of Epitaxial CeO2 Films on (1̄012) Sapphire by Halide Source Plasma Enhanced Chemical Vapor Deposition
- 1 July 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (7A) , L927
- https://doi.org/10.1143/jjap.33.l927
Abstract
We grew epitaxial CeO2 films on (1̄012) sapphire by halide source plasma enhanced chemical vapor deposition (halide-PECVD) using CeBr3 and O2 as source materials. We obtained amorphous films at substrate temperatures of 620° C, polycrystalline films at 680° C, and highly aligned films at 720°C. X-ray diffraction patterns show that (001) CeO2 is parallel to (1̄012) sapphire, and electron channeling patterns show [110] CeO2 aligned with [22̄01] sapphire. AFM shows very smooth films with a maximum variation of ± 2 nm. We grew YBCO film on CeO2/sapphire with a T c of 83 K.Keywords
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