Abstract
Additive effects on plasma etching durability for positive resist have been studied. The radical scavenger and plastics antioxidant increase the plasma etching durability of positive resists by reducing thickness loss and pattern deformation after plasma etching (thickness loss decreases about 2 times for 10% additive). The sensitivity, contrast, and development of additive‐containing resists, showing slight difference from original resists, are investigated by electron beam exposure.

This publication has 0 references indexed in Scilit: