Formation of Cubic SiC Crystals by Gas-Phase Reaction
- 1 July 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (7R)
- https://doi.org/10.1143/jjap.28.1217
Abstract
Cubic SiC crystals of 4 mm in maximum edge length were produced by heating a mixed powder hexagonal SiC and SiO2 around 2350°C. In this condition, a Si element produced by the reduction of SiO2 played an important role in the growth of the cubic type crystal. Microscope observation of the as-grown surface of crystals revealed that the recrystallization from the hexagonal-to-cubic types occurred through a gas phase, i.e. a vaporization-deposition process.Keywords
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