2.7-μm InGaAsSb/AlGaAsSb laser diodes with continuous-wave operation up to −39 °C

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Abstract
We have demonstrated continuous wave operation of 2.7‐μm InGaAsSb/AlGaAsSb multiquantum‐well diode lasers up to a temperature of 234 K (−39 °C). These devices were grown by molecular‐beam‐epitaxy. They have a tendency to operate in a dominant single mode over well‐defined temperature and current intervals. A comparison of spontaneous emission spectra shows that above threshold, the quasi‐Fermi level is pinned and that most of the carriers are injected into nonlasing states. This effect leads to a rapid decrease of differential efficiency with increasing temperature.

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