Examination of Aluminum‐Copper Films during the Galvanostatic Formation of Anodic Oxide: II . Rutherford Backscattering and Depth Profiling

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Abstract
The anodization of evaporated aluminum/copper alloy films has been investigated using Rutherford backscattering. It has been shown that the copper, initially distributed uniformly through the aluminum film, is not incorporated in the anodic oxide but accumulated at the metal oxide interface. At high potentials this interface becomes rougher due to copper‐rich inclusions which finally cause local film breakdown. An excess copper accumulation of about 1 atomic percent above average is distributed over 650Å of the metal phase and moves inward as the anodic oxide grows. This transport is explained by an enhanced diffusion of the copper through a disordered metal layer caused by the formation of the anodic oxide.

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