Growth kinetics, impurity incorporation, defect generation, and interface quality of molecular-beam epitaxy grown AlGaAs/GaAs quantum wells: Role of group III and group V fluxes
- 1 July 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 7 (4) , 704-709
- https://doi.org/10.1116/1.584629
Abstract
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