Hydrogen response mechanism of Pt–GaN Schottky diodes
- 14 February 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (7) , 1222-1224
- https://doi.org/10.1063/1.1450044
Abstract
Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current–voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen.Keywords
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