Reproducibility of transmission line measurement of bipolar I-V characteristics of MOSFETs
Open Access
- 1 June 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 48 (3) , 721-723
- https://doi.org/10.1109/19.772206
Abstract
Reproducibility of transmission line (TL) measurement of bipolar current-voltage (I-V) characteristics of grounded gate MOSFET's has been examined. It is observed that the reproducibility is related to the duration of the pulses generated by the transmission line, and a longer pulse duration gives a better reproducibility. For a short pulse duration, it is more difficult to reproduce the I-V characteristics in the triggering region than in other regions (i.e., the pretriggering and snapback regions).published_or_final_versioKeywords
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