Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates

Preprint

9 October 2002

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0205651

Abstract

A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects.

Keywords

All Related Versions

Version 1, 2002-05-30, ArXiv
Version 2, 2002-10-09, ArXiv
Published version: Applied Physics Letters, 81 (25), 4781.

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