Improvement in gate breakdown voltage for SOS devices
- 1 March 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (3) , 242-245
- https://doi.org/10.1109/T-ED.1981.20321
Abstract
It was attempted to improve low gate breakdown voltage for an air-isolated SOS devices, employing ion-beam etching technology for silicon-island formation. Gate breakdown origin was clarified with SEM observation. As a result, it has been found that 1) low gate breakdown voltage for air-isolated SOS devices is caused by thinner gate oxide at the bottom of a steep silicon-island edge, and 2) ion-beam etching with the ion-beam incident angle over 40° allows the silicon island to have a sidewall angle under 35°, thus resulting in uniform gate oxide thickness. Consequently, the gate breakdown voltage for the air-isolated SOS devices can be improved to as high as that for dielectric isolated SOS devices.Keywords
This publication has 0 references indexed in Scilit: