High-speed 1 μm GaAs m.e.s.f.e.t.
- 17 April 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (8) , 171-172
- https://doi.org/10.1049/el:19750131
Abstract
By minimising parasitic series resistances, a GaAs m.e.s.f.e.t. with 1 μm gate length was fabricated, possessing the highest known r.f. power gain, measured up to 18 GHz, for GaAs m.e.s.f.e.t.s.Keywords
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