Origin of 1/f noise in bipolar transistors

1 September 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 27 (9) , 1753-1757
https://doi.org/10.1109/t-ed.1980.20097

Abstract

In planar n-p-n transistors fabricated in IC technology, the dependence of 1/ f noise on the base current density j B , the base width W B , and the emitter area F E was measured. The power spectrum S_{iB}(f) of the base current fluctuations i B can be represented by the empirical relation S_{iB} = const. j\min{B}\max{\gamma} \cdot F\min{E}\max{\beta} \cdot w\min{B}\max{-1} \cdot f^{-1} where 1 \leq \gamma \leq 2 and β has been found to be 1.3 or 2. The results of measurements on gate-controlled devices indicate that 1/ f noise cannot be explained by McWhorter's surface model. Therefore, a new model is proposed which assumes resistance fluctuations in the base region as the cause of 1/ f noise in bipolar transistors. The model establishes the relation for S_{iB}(f) as well as the magnitude of the coefficients β and γ.

Keywords

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