Reactive ion etching of II-VI semiconductors using a mixture of methane and hydrogen

3 January 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (1) , 73-75
https://doi.org/10.1049/el:19910047

Abstract

It was found that RIE using CH₄/H₂ is a high resolution dry etching technique which is suitable for a variety of II-VI semiconductors. The optimum conditions for etching of ZnTe are given. The quality of surfaces etched under these conditions has been examined using XPS and Raman spectroscopy, both techniques indicating little overt damage.

Keywords

II-VI SEMICONDUCTORS
ZNTE
RAMAN SPECTROSCOPY
METHANE MIXTURE
XPS
REACTIVE ION ETCHING
OPTIMUM CONDITIONS
QUALITY OF SURFACES ETCHED
RIE
HIGH RESOLUTION DRY ETCHING TECHNIQUE

This publication has 1 reference indexed in Scilit:

Electron Beam Nanolithography
Springer Proceedings in Physics, 1986