Anti-site defects in n-Bi2Se3 crystals
- 1 January 1990
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 51 (12) , 1353-1360
- https://doi.org/10.1016/0022-3697(90)90017-a
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Preparation and some physical properties of Bi2−xInxSe3 single crystalsJournal of Materials Science, 1990
- Investigation of the conduction band fermi surface in Bi2Se3 at high electron concentrationsPhysica Status Solidi (b), 1975
- The g‐factor of the conduction electrons in Bi2Se3Physica Status Solidi (b), 1975
- Burstein Shift of the Absorption Edge of n-Bi2Se3Physica Status Solidi (b), 1974
- Conductivity Tensor Components of n-Bi2Se3Physica Status Solidi (b), 1974
- Optically Active Lattice Vibrations in Bi2Se3Physica Status Solidi (b), 1974
- Constant Energy Surfaces of n‐Type Bismuth Selenide from the Shubnikov‐de Haas EffectPhysica Status Solidi (b), 1971
- Abhängigkeit der effektiven Masse von der Ladungsträgerkonzentration im Bi2Se3The European Physical Journal A, 1969
- Über Kristallstruktur und elektrische Eigenschaften der Wismutselenide Bi2Se2 und Bi2Se3The European Physical Journal A, 1964
- Determination de la composition a fusion congruente de semiconducteurs binaires par analyse thermique differentielleJournal of Physics and Chemistry of Solids, 1959