Fabrication of bi-periodic sinusoidal structures on silicon
- 1 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (14) , 1966-1968
- https://doi.org/10.1063/1.115641
Abstract
We illustrate a method for fabricating bi-periodic quasi-sinusoidal structures that are difficult to produce by conventional microfabrication techniques. By annealing bi-periodic square wave structures in ultra-high vacuum (UHV), the surface profile becomes quasi-sinusoidal due to mass transport processes. The method is illustrated by the creation of 4 and 6 μm period structures on Si(001) through annealing at 1100 °C in UHV. Surface profiles are measured by atomic force microscopy (AFM). The structures produced may have applications in electronic or optical devices.Keywords
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