Optical characterization of interface disorder in multi-quantum well structures
- 1 May 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 38 (8) , 709-712
- https://doi.org/10.1016/0038-1098(81)90401-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- X-ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayersJournal of Applied Physics, 1980
- Recent developments in molecular beam epitaxy (MBE)Journal of Vacuum Science and Technology, 1979
- Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxyJournal of Crystal Growth, 1978
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974