Photoreflection study on the surface electric field of delta-doped GaAs grown by molecular beam epitaxy
- 15 August 1992
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (4) , 1468-1472
- https://doi.org/10.1063/1.351710
Abstract
Photoreflectance spectroscopy has been used to study the surface electric-field strength and the surface potential of delta-doped GaAs. Franz–Keldysh oscillations in the reflectance spectra were clearly observed and the oscillation periods were used to calculate the internal electric fields of the delta-doped samples. Based on the measured results and the self-consistent calculation, a surface potential of 0.6 eV is obtained.This publication has 15 references indexed in Scilit:
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