InGaN-GaN based light-emitting diodes over (111) spinel substrates
- 15 July 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (3) , 369-370
- https://doi.org/10.1063/1.118063
Abstract
In this letter we report the deposition of high quality GaN‐InGaN double‐heterostructure pn junctions over (111) spinel substrates using low‐pressure metalorganic chemical vapor deposition. A ten‐period undoped GaN‐In0.1Ga0.9N multiple quantum well was used for the active region. Mesa‐type light‐emitting diode (LED) structures were fabricated which under forward bias exhibited only strong band‐edge electroluminescence. The spectral emission was centered at 385 nm and had a linewidth of 15 nm. This is similar to what is measured for similar LED structures over sapphire substrates.Keywords
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