Main Electron Traps in In1-xGaxP (0.12≤ x ≤ 0.96)
- 1 March 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (3R)
- https://doi.org/10.1143/jjap.28.410
Abstract
Deep level transient spectroscopy (DLTS) measurement has been made on solution-grown Te-doped In1-x Ga x P alloys with 0.12 ≤ x ≤0.96. Three main electron traps, SGE1, SGE2 and SGE3, were detected. Their activation energy of carrier emission, E T, were about 0.17, 0.40 and 0.45∼0.60 eV, respectively. SGE1 was detected in samples with x \lesssim 0.83, SGE2 in samples with x \gtrsim0.56 and SGE3 was detected in all samples examined. The peak of the DLTS spectrum of SGE2 moves to lower temperatures as the filling pulse width, t p, is increased; and E T derived from the Arrhenius plot depends on t p.Keywords
This publication has 20 references indexed in Scilit:
- Observation of Donor-Related Deep Levels in GaxIn1-xP (0.52≤x≤0.71)Japanese Journal of Applied Physics, 1988
- A Simple Calculation of the DX Center Concentration Based on an L-Donor ModelJapanese Journal of Applied Physics, 1985
- Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient SpectroscopyJapanese Journal of Applied Physics, 1984
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Study of the main electron trap inalloysPhysical Review B, 1977
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977
- Hall Mobility of Te-Doped In1-xGaxP at 300 KJapanese Journal of Applied Physics, 1974
- Electron Mobility in Ge, Si, and GaPPhysica Status Solidi (b), 1972
- Electroreflectance and Band Structure ofAlloysPhysical Review B, 1972
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961