Nanolithography Using Fullerene Films as an Electron Beam Resist
- 1 January 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (1A) , L63-65
- https://doi.org/10.1143/jjap.35.l63
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Fabrication of silicon nanostructures with electron-beam lithography using AlN as a dry-etch durable resistJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Fabrication of sub-10 nm structures by lift-off and by etching after electron-beam exposure of poly(methylmethacrylate) resist on solid substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Enhanced cohesion of photo-oxygenated fullerene films: A new opportunity for lithographyApplied Physics A, 1993
- Photoinduced Polymerization of Solid C 60 FilmsScience, 1993
- C60: BuckminsterfullereneNature, 1985