Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates

1 February 1995

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 34 (2S) , 1098-1101
https://doi.org/10.1143/jjap.34.1098

Abstract

We report on a growth process on patterned GaAs (001) substrate during metalorganic vapor-phase epitaxy (MOVPE) and a novel approach for the fabrication of AlGaAs/GaAs quantum dot (QD) structures. The patterned substrate has an array of holes on the surface and those holes are partially filled with GaAs by MOVPE growth, followed by GaAs/AlGaAs quantum well structures. Detailed investigation on the growth process on such patterned substrates revealed the presence of complicated two-dimensional duffusion of Ga and Al between two different surfaces. Formation of GaAs dots was directly confirmed by spatially resolved cathodoluminescence measurements.

Keywords

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