Second harmonic generation and atomic-force microscopy studies of porous silicon

Abstract
Structural properties of porous silicon were studied with atomic-force microscopy (AFM) and optical second harmonic generation (SHG). Depending on etching conditions, the SHG response was observed to be either anisotropic, showing C2v symmetry, or isotropic. This correlated with AFM observations of quasi ordered structures in the first case. The Si etching process was studied by in situ SHG measurements.

This publication has 0 references indexed in Scilit: