Pit formation in GaInN quantum wells
- 9 February 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (6) , 710-712
- https://doi.org/10.1063/1.120853
Abstract
The formation of pits in GaInN quantum wells (QWs) has been studied by atomic force microscopy and transmission electron microscopy. It is found that the pits have a hexahedron cone morphology with six sidewalls on 〈11̄01〉 planes and dislocations connected to their vertexes. The dislocations may induce the formation of pits during the growth of GaInN QWs.Keywords
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