Light emission of GaAs power MESFETs under RF drive
- 1 February 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 1 (2) , 20-21
- https://doi.org/10.1109/edl.1980.25214
Abstract
Light emission from microwave power GaAs MESFETs was observed under rf operating conditions. It is shown that the light emission occurs at the drain side of the gate stripe and the light intensity can be correlated with the rf input drive and the output power saturation characteristic of the device.Keywords
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