Vertically tapered spot size transformers fabricatedby a simplemasking technique
- 11 May 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (10) , 794-796
- https://doi.org/10.1049/el:19950527
Abstract
A novel, simple fabrication method of vertically tapered spot size transformers is demonstrated by screening the sample partially with a shadow mask during reactive ion etching. The authors measured a transmission loss of 2.3 dB for a single taper structure from the chip waveguide without an antireflection coating on the fibre.Keywords
This publication has 5 references indexed in Scilit:
- Vertical InP/InGaAsP tapers for low-loss optical fibre-waveguide couplingElectronics Letters, 1992
- Low-loss fibre-chip coupling by buried laterally tapered InP/InGaAsP waveguide structureElectronics Letters, 1992
- Tapered InP/InGaAsP waveguide structure for efficient fibre-chip couplingElectronics Letters, 1991
- Low-loss spot-size transformer by dual tapered waveguides (DTW-SST)Journal of Lightwave Technology, 1990
- Tapered waveguide InGaAs/InGaAsP multiple-quantum-well lasersIEEE Photonics Technology Letters, 1990