100-ns electronically variable semiconductor memory using two diodes per memory cell
- 1 October 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 5 (5) , 192-196
- https://doi.org/10.1109/jssc.1970.1050112
Abstract
See abstr. B24998, C13759 of 1970.Keywords
This publication has 4 references indexed in Scilit:
- Electrochemically Controlled Thinning of SiliconBell System Technical Journal, 1970
- Silicon Schottky Barrier Diode with Near-Ideal I-V CharacteristicsBell System Technical Journal, 1968
- High speed, high-current word-matrix using charge-storage diodes for rail selectionPublished by Association for Computing Machinery (ACM) ,1968
- P-N Junction Charge-Storage DiodesProceedings of the IRE, 1962