Practical aspects of the depletion etch method in high-voltage devices
- 1 May 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (5) , 977-982
- https://doi.org/10.1109/T-ED.1980.19967
Abstract
In an earlier paper a new junction-termination geometry was described which was able to give near-ideal avalanche breakdown voltage in both plane and planar p-n junctions. The difficulty of the DEM (depletion etch method) was to achieve a precise etch depth which failure to achieve led to reduced effectiveness. In this paper the range of avalanche breakdown voltage is related to the accuracy of the depletion etch in a quanitative and rather general way so that\Delta V, the decrease in breakdown voltage below the ideal is related to\Delta Y, the deviation in etch depth from the ideal, for any p-n junction.Keywords
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