Formation of titanium nitride layers by the nitridation of titanium in high-pressure ammonium ambient
- 15 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (16) , 1660-1662
- https://doi.org/10.1063/1.104078
Abstract
Nitridation of titanium layer is performed in a high‐pressure (5.9 kg/cm2) ammonium (NH3) ambient. Although the nitridation of titanium surface does not occur at 700 °C in an atmospheric pressure, it does occur at 650 °C in an ammonium pressure of 5.9 kg/cm2. Nitridation temperature can be lowered by 100–150 °C with an increase in ammonium pressure from 2.0 to 5.9 kg/cm2. Thickness of titanium nitride layer increased markedly with increasing ammonium pressure. This is due to the enhancement of the chemical reaction of titanium with ammonium gas by the increase of pressure. The thickness increases with an increase of nitridation temperature. The thickness of the titanium silicide layer formed by the silicidation reaction between titanium and the silicon wafer is reduced with the increase in ammonium pressure.Keywords
This publication has 7 references indexed in Scilit:
- Simultaneous formation of TiN and TiSi2 by lamp annealing in NH3 ambient and its application to diffusion barriersJournal of Applied Physics, 1987
- Novel submicrometer MOS devices by self-aligned nitridation of silicideIEEE Transactions on Electron Devices, 1986
- Ambient Gas Effects on the Reaction of Titanium with SiliconJournal of the Electrochemical Society, 1985
- TiN formed by evaporation as a diffusion barrier between Al and SiJournal of Vacuum Science and Technology, 1982
- Interfacial reactions between aluminum and transition-metal nitride and carbide filmsJournal of Applied Physics, 1982
- TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devicesApplied Physics Letters, 1980
- Diffusion barriers in thin filmsThin Solid Films, 1978