Thickness dependence of the electrical characteristics of chemical vapor deposited diamond films
- 10 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (2) , 193-195
- https://doi.org/10.1063/1.111501
Abstract
The electrical characteristics of chemically vapor deposited (CVD) diamond films were measured as a function of film thickness. The samples studied were polycrystalline with the average grain size increasing from approximately 1 μm on the substrate side to approximately 30 μm on the growth surface for the thickest sample. Using time‐resolved transient photoconductivity and charged‐particle induced conductivity, the collection distance (d) that a free carrier drifts under the influence of an applied electric field was measured. Our data indicate that there is a gradient in the collection distance through the material. This gradient in electrical properties has implications for electronic uses of CVD diamond.Keywords
This publication has 6 references indexed in Scilit:
- Particle- and photoinduced conductivity in type-IIa diamondsJournal of Applied Physics, 1993
- Polycrystalline CVD Diamond Films with High Electrical MobilityScience, 1993
- Cathodoluminescence investigation of impurities and defects in single crystal diamond grown by the combustion-flame methodApplied Physics Letters, 1992
- Electrical properties and performances of natural diamond nuclear radiation detectorsNuclear Instruments and Methods, 1979
- Figure of merit for semiconductors for high-speed switchesProceedings of the IEEE, 1972
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971