Transport in gated undoped GaAs/AlxGa1−xAs heterostructures in the high density and high mobility range
- 25 November 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (22) , 3360-3362
- https://doi.org/10.1063/1.117306
Abstract
The two‐dimensional electron gas with electron densities higher than 1016 m−2 which is formed at the interface in undoped GaAs/AlxGa1−xAs heterostructure by the electric field generated by a top gate is studied. Despite the high electron density in the sample, rather high mobilities of about 100 m2/Vs can be achieved with sufficient small gate leakage currents. The population of the second subband is studied from Shubnikov‐de Haas measurements in these devices.Keywords
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