Epitaxial growth, characterization, and phase diagram of HgZnTe

Publisher Website
Google Scholar
Abstract
Epitaxial layers of Hg1−xZnxTe (0.11≤x≤0.22) were grown by the horizontal liquid‐phase epitaxy technique on Cd1−yZnyTe substrates with 0≤y≤0.20. The structural and electrical properties of the Hg1−xZnxTe layers were characterized and compared with those of epitaxial Hg1−xCdxTe. It was found that the structural and electrical properties of long‐wavelength infrared (LWIR) HgZnTe, when grown on closely lattice‐matched CdZnTe substrates, are comparable to those of high‐quality epitaxial LWIR HgCdTe. However, the annealing behavior of the Hg1−xZnxTe layers shows a decreased Hg diffusion rate relative to that in Hg1−xCdxTe. Liquidus temperatures of Te‐rich ternary (Hg1−zZnz)1−yTey solutions were measured. The preliminary liquidus data indicate that, in the Te corner, the Hg–Zn–Te and Hg–Cd–Te phase diagrams are very similar.

This publication has 0 references indexed in Scilit: