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An analysis of latch-up prevention in CMOS IC's using an epitaxial-buried layer process
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Publications
An analysis of latch-up prevention in CMOS IC's using an epitaxial-buried layer process
An analysis of latch-up prevention in CMOS IC's using an epitaxial-buried layer process
DE
D.B. Estreich
D.B. Estreich
AO
A. Ochoa
A. Ochoa
RD
R.W. Dutton
R.W. Dutton
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1 January 1978
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1978.189394
Abstract
No abstract available
Keywords
INTEGRATED CIRCUITS
ELECTRONIC CIRCUITS
EQUIVALENT CIRCUITS
FABRICATION
TRANSPORT EQUATION
SEMICONDUCTOR DEVICES
CMOS INTEGRATED CIRCUITS
PREDICTION ALGORITHMS
SEMICONDUCTOR DEVICE MODELING
HARDENING
RADIATION HARDENING
INTEGRATED CIRCUIT
PHOTOCONDUCTIVITY
CONDUCTIVITY
PERFORMANCE
IONIZING RADIATION
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