Use of a sputtered SiO 2 coating for surface protection during ‘leaky tube’ diffusion of Zn into GaAs
- 10 November 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (23) , 962-963
- https://doi.org/10.1049/el:19830654
Abstract
Thin SiO2 layers, deposited by low-power room-temperature sputtering, have been employed as surface protection coatings during Zn diffusion into GaAs. These layers prevent surface erosion of the GaAs, but allow the Zn diffusion to proceed with negligible attenuation. The use of arsenic over-pressure during diffusion can thus be avoided.Keywords
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